PART |
Description |
Maker |
SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
1N4933GP 1N4934GP 1N4935GP 1N4936GP 1N4937GP |
Fast Recovery Pack: DO-41 SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A
|
Gulf Semiconductor
|
STGW39NC60VD STGW39NC60VD06 GW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
SIDC06D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
STGW40NC60WD GW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
STGE50NC60WD |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
|
STMicroelectronics
|
ES3A ES3B ES3C ES3D ES3G ES3J |
Super Fast Recovery Pack: SMC SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞3.0A SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?.0A
|
Gulf Semiconductor http://
|
AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
ES1A ES1B ES1C ES1D ES1G ES1J |
Super Fast Recovery Pack: SMA SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞 1.0A SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT 1.0A SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?1.0A
|
Gulf Semiconductor
|
IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
|
INFINEON[Infineon Technologies AG]
|